PART |
Description |
Maker |
IS42VM16800F-75BLI |
SYNCHRONOUS DRAM, PBGA54 2M x 16Bits x 4Banks Mobile Synchronous DRAM
|
INTEGRATED SILICON SOLUTION INC Integrated Silicon Solu...
|
TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM) 4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM)的 16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM)的
|
Toshiba Corporation Toshiba, Corp.
|
HY5W2B6DLF-HE HY5W2B6DLFP-HE |
4Banks x 2M x 16bits Synchronous DRAM
|
Hynix Semiconductor
|
IS42VM16400G |
1M x 16Bits x 4Banks Low Power Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
IS46LR32200B |
512K x 32Bits x 4Banks Mobile DDR SDRAM
|
Integrated Silicon Solu...
|
IS46LR32160B |
4M x 32Bits x 4Banks Mobile DDR SDRAM
|
Integrated Silicon Solu...
|
IS45SM32400H-6BLA1 |
1M x 32Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
HY57V281620HCST-6I HY57V281620HCST-KI HY57V281620H |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz 4 Banks x 2M x 16bits Synchronous DRAM
|
HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc.
|
LE28F1101T-40 LE28F1101T-45 LE28F1101T-55 LE28F110 |
1M(65536words×16bits) Flash EEPROM 1M(65536words】16bits) Flash EEPROM
|
Sanyo Semicon Device
|
LC8390M LC8390 |
16bits A/D and D/A Converters for Digital Audio Systems
|
SANYO[Sanyo Semicon Device]
|